制造商 | 部件名 | 数据表 | 功能描述 |
Cherry Semiconductor Co... |
DC1GN7AAA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
DC1GN7LA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
DC2GN7AAA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
DC2GN7LA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
DC3GN7AAA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
DC3GN7LA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
DC4GN7AAA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
DC4GN7LA
|
246Kb/3P
|
SUBMINIATURE — SEALED
|
United Chemi-Con, Inc. |
EFTP101LGN712MR75N
|
48Kb/2P
|
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
|
EFTP451LGN761ML95N
|
48Kb/2P
|
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
|
EFTP630LGN742MR50N
|
48Kb/2P
|
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
|
IXYS Corporation |
IXGN72N60A3
|
190Kb/6P
|
Ultra Low Vsat PT IGBT for up to 5kHz switching
|
IXGN72N60C3H1
|
229Kb/7P
|
High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching
|
Inchange Semiconductor ... |
IXGN72N60C3H1
|
546Kb/4P
|
IGBT
|
MIC GROUP RECTIFIERS |
MZ0.5GN75V
|
113Kb/7P
|
ZENER DIODE
|
MZ0.5GN7V5
|
113Kb/7P
|
ZENER DIODE
|
MZO.5GN75V-1.7
|
113Kb/7P
|
ZENER DIODE
|
MZO.5GN7V5-20
|
113Kb/7P
|
ZENER DIODE
|
Toshiba Semiconductor |
TC51WHM516AXGN70
|
203Kb/11P
|
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TC55YEM416BXGN70
|
238Kb/18P
|
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
|