制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
GT20J101
|
259Kb/6P
|
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT20J101
|
191Kb/6P
|
Silicon N Channel IGBT High Power Switching Applications
|
GT20J101
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT20J101
|
191Kb/6P
|
Silicon N Channel IGBT High Power Switching Applications
|
GT20J121
|
195Kb/7P
|
Discrete IGBTs Silicon N-Channel IGBT
|
GT20J301
|
325Kb/6P
|
N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT20J301
|
491Kb/7P
|
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
GT20J301
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT20J301
|
491Kb/7P
|
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
GT20J311
|
322Kb/6P
|
N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT20J311
|
835Kb/16P
|
Discrete IGBTs
|
GT20J321
|
329Kb/7P
|
High Power Switching Applications Fast Switching Applications
|
GT20J321
|
197Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|
GT20J321
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT20J321
|
197Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|
GT20J341
|
251Kb/10P
|
Discrete IGBTs Silicon N-Channel IGBT
|