制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
GT40G121
|
151Kb/5P
|
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
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Start with "GT40G121" -
Total : 41 ( 1/3 Page) |
GREEGOO Electric Co.,Lt... |
GT4044RA2
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4044RD1
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4044RD3
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4044ZA2
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4044ZD1
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4044ZD3
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4048RA2
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4048RD1
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4048RD3
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4048ZA2
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4048ZD1
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
GT4048ZD3
|
485Kb/2P |
GT 10 to 40 Amps AC SSR
|
Toshiba Semiconductor |
GT40J121
|
222Kb/8P |
Discrete IGBTs Silicon N-Channel IGBT
|
GT40J321
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT40J322
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT40M101
|
227Kb/4P |
N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)
|
GT40M101
|
835Kb/16P |
Discrete IGBTs
|
GT40M301
|
271Kb/5P |
N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS)
|
GT40M301
|
835Kb/16P |
Discrete IGBTs
|