制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
GT50J325
|
170Kb/7P
|
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT50J325
|
198Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|
GT50J325
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT50J325
|
198Kb/7P
|
Silicon N Channel IGBT High Power Switching Applications
|
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Start with "GT50J325" -
Total : 13 ( 1/1 Page) |
Toshiba Semiconductor |
GT50J325
|
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications
|
GT50J322
|
254Kb/5P |
N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS)
|
GT50J322
|
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
GT50J322
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J322H
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J322
|
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
GT50J327
|
159Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
GT50J327
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J328
|
232Kb/6P |
Current Resonance Inverter Switching Application Fourth Generation IGBT
|
GT50J328
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J301
|
282Kb/5P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT50J301
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J341
|
250Kb/9P |
Discrete IGBTs Silicon N-Channel IGBT
|