制造商 | 部件名 | 数据表 | 功能描述 |
Guangdong Kexin Industr... |
SI4435DY-HF
|
523Kb/2P
|
P-Channel MOSFET
|
VBsemi Electronics Co.,... |
SI4435DY-T1-E3
|
1,001Kb/9P
|
P-Channel 30-V (D-S) MOSFET
|
Search Partnumber :
Start with "SI4435DY-" -
Total : 16 ( 1/1 Page) |
Guangdong Kexin Industr... |
SI4435DY-HF
|
523Kb/2P |
P-Channel MOSFET
|
VBsemi Electronics Co.,... |
SI4435DY-T1-E3
|
1,001Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
International Rectifier |
SI4435DYPBF
|
113Kb/8P |
Simple Drive Requirements
|
SI4435DYPBF
|
107Kb/8P |
HEXFET Power MOSFET
|
SI4435DYPBF
|
113Kb/8P |
Simple Drive Requirements
|
SI4435DYTRPBF
|
88Kb/8P |
Ultra Low On-Resistance
|
Vishay Siliconix |
SI4435DDY
|
279Kb/10P |
P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09 |
SHENZHEN DOINGTER SEMIC... |
SI4435DDY
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
Vishay Siliconix |
Si4435DDY
|
212Kb/9P |
P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09 |
SI4435DDY
|
279Kb/10P |
P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09 |
SI4435DDY-T1-E3
|
217Kb/9P |
P-Channel 30 V (D-S) MOSFET
01-Jan-2022 |
VBsemi Electronics Co.,... |
SI4435DDY-T1-E3
|
1,003Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
Vishay Siliconix |
SI4435DDY-T1-GE3
|
217Kb/9P |
P-Channel 30 V (D-S) MOSFET
01-Jan-2022 |
SI4435DDY-T1-GE3
|
279Kb/10P |
P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09 |
SI4435DDY
|
212Kb/9P |
P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09 |
SI4435DDY
|
217Kb/9P |
P-Channel 30 V (D-S) MOSFET
01-Jan-2022 |