制造商 | 部件名 | 数据表 | 功能描述 |
CET-MOS Technology Corp... |
CEW60N55S
|
561Kb/5P
|
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2019.July
|
Inchange Semiconductor ... |
FMW60N059S2FDHF
|
322Kb/2P
|
isc N-Channel MOSFET Transistor
2023-9-7
|
FMW60N070S2HF
|
375Kb/2P
|
isc N-Channel MOSFET Transistor
|
FMW60N190S2HF
|
291Kb/2P
|
isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IGW60N60H3
|
1Mb/14P
|
High speed IGBT in Trench ahnd Fieldstop technology
2012-04-23 revision:1.1
|
IKFW60N60DH3E
|
1Mb/16P
|
TRENCHSTOPTM Advanced Isolation
V2.1 2017-09-21
|
IKFW60N60EH3
|
1Mb/16P
|
High speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated package
V2.1 2017-09-21
|
IKFW60N65ES5
|
1Mb/15P
|
TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode
V2.1 2020-07-09
|
IKW60N60H3
|
1Mb/16P
|
600V high speed switching series third generation
2012-05-29 revision:1.2
|
STMicroelectronics |
SCTW60N120G2AG
|
197Kb/11P
|
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
Rev 1 - May 2020
|
STFW60N65M5
|
975Kb/16P
|
N-channel 650 V, 0.049 ohm, 46 A MDmesh V Power MOSFET
|
STW60N10
|
246Kb/11P
|
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
STW60N65M5
|
975Kb/16P
|
N-channel 650 V, 0.049 ohm, 46 A MDmesh V Power MOSFET
|
STW60NE10
|
88Kb/8P
|
N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOSFET
|
STW60NM50N
|
757Kb/13P
|
N-channel 500 V, 0.035 廓, 68 A, MDmesh??II Power MOSFET in a TO-247 package
April 2013 Rev 2
|
Inchange Semiconductor ... |
STW60NM50N
|
335Kb/2P
|
isc N-Channel MOSFET Transistor
|
Xian Semipower Electron... |
SW60N04V
|
625Kb/6P
|
N-channel Enhanced mode DFN5*6 MOSFET
|
SW60N06T
|
751Kb/5P
|
N-channel TO-220 MOSFET
|
SW60N06V1
|
715Kb/6P
|
N-channel Enhancement mode TO-251MOSFET
|
SW60N06V2
|
847Kb/6P
|
N-channel Enhanced mode TO-251 MOSFET
|