制造商 | 部件名 | 数据表 | 功能描述 |
NXP Semiconductors |
06035J0R8BS
|
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016 |
AVX Corporation |
06035J0R1PBSTR
|
340Kb/26P |
Thin-Film Technology
|
NXP Semiconductors |
06035J0R4BBS
|
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
06035J0R6BS
|
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016 |
TriQuint Semiconductor |
06035J0R7ABSTR
|
747Kb/8P |
Edge QAM Gain Stage
|
NXP Semiconductors |
06035J0R7BBS
|
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
06035J0R9BS
|
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016 |
06035J100GBS
|
678Kb/15P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 2, 9/2014 |
06035J100GBS
|
901Kb/18P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 2, 9/2014 |
06035J1R8BBS
|
678Kb/15P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 2, 9/2014 |
06035J1R8BBS
|
901Kb/18P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 2, 9/2014 |
06035J1R8BS
|
460Kb/21P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 9, 10/2014 |
06035J1R8BS
|
181Kb/9P |
Gallium Arsenide CATV Integrated Amplifier Module
Rev. 8, 3/2007 |
06035J2R0BBS
|
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
06035J2R2BBS
|
678Kb/15P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 2, 9/2014 |
06035J2R2BBS
|
901Kb/18P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 2, 9/2014 |
06035J2R2BS
|
460Kb/21P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 9, 10/2014 |
06035J2R7BBS
|
904Kb/19P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 3, 1/2007 |
AVX Corporation |
06035J3R3BBTTR
|
458Kb/20P |
Accu-F Accu-P Thin-Film RF/Microwave Capacitors
|
NXP Semiconductors |
06035J3R9BS
|
478Kb/24P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 6, 12/2017 |