制造商 | 部件名 | 数据表 | 功能描述 |
Vishay Siliconix |
VF30100S-E3
|
156Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 14-Dec-16 |
VF30100S-E3
|
213Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VF30100S-E3-4W
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Oct-09 |
VF30100S-E3/45
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
Revision: 31-Jul-08 |
VF30100S-E3/4W
|
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Oct-09 |
VF30100S-E3/4W
|
156Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 14-Dec-16 |
VF30100SG
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
Revision: 31-Jul-08 |
VF30100SG-E3
|
152Kb/5P |
High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 11-Sep-13 |
VF30100SG-E3
|
161Kb/6P |
High efficiency operation
Revision: 13-Dec-16 |
VF30100SG-E3
|
220Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VF30100SG-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
Revision: 31-Jul-08 |
VF30100S
|
78Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 09-Nov-15 |